Trench MOSFET device and the preparation method thereof
US10032728B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2016 |
| Grant date | Jul 24, 2018 |
| Priority date | — |
| Expiry date | Jun 30, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/117
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A trench-type metal-oxide-semiconductor field-effect transistor (MOSFET) device and a fabrication method are disclosed. The trench MOSFET device comprises a semiconductor substrate of a first conductivity type. The semiconductor substrate has a plurality of first trenches arranged side by side in a first preset area of the semiconductor substrate extending along a first direction and a plurality of second trenches arranged side by side in a second preset area of the semiconductor substrate extending along a second direction perpendicular to the first direction. A control gate is formed in each of the pluralities of first and second trenches. A body region of a second conductivity type is formed at a top portion of the semiconductor substrate near sidewalls of the pluralities of first and second trenches. A source region of the first conductivity type is formed on a top portion of the body region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.