Plasma activated conformal dielectric film deposition
US10043655B2 · kind B2 · utility
23Cited by
176References
20Claims
0Family size
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Key dates
| Filing date | Feb 7, 2017 |
| Grant date | Aug 7, 2018 |
| Priority date | — |
| Expiry date | Feb 7, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3321
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.