Self-compensation of stray field of perpendicular magnetic elements

US10043967B2 · kind B2 · utility

Assignee

• QUALCOMM Incorporated · US

Inventors

• Wei-Chuan Chen · Taipei, TW
• Xiaochun Zhu · San Diego, US
• Xia Li · San Diego, US
• Yu Lu · San Diego, US
• Chando Park · San Diego, US
• Seung H. Kang · San Diego, US

Key dates

• Filing date: Aug 7, 2014
• Grant date: Aug 7, 2018
• Expiry date: Oct 2, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N50/85

Abstract

A perpendicular magnetic tunnel junction (pMTJ) device includes a perpendicular reference layer, a tunnel barrier layer on a surface of the perpendicular reference layer, and a perpendicular free layer on a surface of the tunnel barrier layer. The pMTJ device also includes a dielectric passivation layer on the tunnel barrier layer and surrounding the perpendicular free layer. The pMTJ device further includes a high permeability material on the dielectric passivation layer that is configured to be magnetized by the perpendicular reference layer and to provide a stray field to the perpendicular free layer that compensates for a stray field from the perpendicular reference layer.