Atomic layer etching of tungsten and other metals

US10096487B2 · kind B2 · utility

Assignee

• Lam Research Corporation · US

Inventors

• Wenbing Yang · Fremont, US
• Samantha Tan · Fremont, US
• Keren Jacobs Kanarik · Los Altos, US
• Jeffrey Marks · San Jose, US
• Taeseung Kim · Fremont, US
• Meihua Shen · Fremont, US
• Thorsten Lill · Santa Clara, US

Key dates

• Filing date: Aug 17, 2016
• Grant date: Oct 9, 2018
• Expiry date: Aug 17, 2036

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/924
• WIPO field: Electrical machinery, apparatus, energy
• WIPO sector: Electrical engineering

Abstract

Provided herein are methods of atomic layer etching (ALE) of metals including tungsten (W) and cobalt (Co). The methods disclosed herein provide precise etch control down to the atomic level, with etching a low as 1 Å to 10 Å per cycle in some embodiments. In some embodiments, directional control is provided without damage to the surface of interest. The methods may include cycles of a modification operation to form a reactive layer, followed by a removal operation to etch only this modified layer. The modification is performed without spontaneously etching the surface of the metal.