Method of making polishing layer for chemical mechanical polishing pad

US10105825B2 · kind B2 · utility

Assignees

• Rohm and Haas Electronic Materials CMP Holdings, Inc. · US
• DOW GLOBAL TECHNOLOGIES LLC · US

Inventors

• David Michael Veneziale · Hatfield, US
• Bainian Qian · Newark, US
• Teresa Brugarolas Brufau · Philadelphia, US
• Julia Kozhukh · Cambridge, US
• Yuhua Tong · Hockessin, US
• Jeffrey B. Miller · Brookline, US
• Diego Lugo · Newark, US
• George C. Jacob · Newark, US
• Marty W. DeGroot · Middletown, US
• Andrew Wank · Avondale, US
• Fengji Yeh · Wilmington, US

Key dates

• Filing date: Jun 26, 2015
• Grant date: Oct 23, 2018
• Expiry date: Dec 2, 2036

Classification

• Technology area (CPC B): Performing Operations; Transporting
• CPC primary: B24B37/24
• WIPO field: Machine tools
• WIPO sector: Mechanical engineering

Abstract

A method of forming a chemical mechanical polishing pad polishing layer is provided, including: providing a mold having a base with a negative of a groove pattern; providing a poly side (P) liquid component; providing an iso side (I) liquid component; providing a pressurized gas; providing an axial mixing device; introducing the poly side (P) liquid component, the iso side (I) liquid component and the pressurized gas to the axial mixing device to form a combination; discharging the combination from the axial mixing device at a velocity of 10 to 300 m/sec toward the base; allowing the combination to solidify into a cake; deriving the chemical mechanical polishing pad polishing layer from the cake; wherein the chemical mechanical polishing pad polishing layer has a polishing surface with the groove pattern formed into the polishing surface; and wherein the polishing surface is adapted for polishing a substrate.