Process method and structure for high voltage MOSFETs
US10115814B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 19, 2018 |
| Grant date | Oct 30, 2018 |
| Priority date | — |
| Expiry date | Jan 19, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/63
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention discloses a semiconductor power device disposed in a semiconductor substrate. The semiconductor power device comprises a plurality of trenches each having a trench endpoint with an endpoint sidewall perpendicular to a longitudinal direction of the trench and extends vertically downward from a top surface to a trench bottom surface. The semiconductor power device further includes a trench bottom dopant region disposed below the trench bottom surface and a sidewall dopant region disposed along the endpoint sidewall wherein the sidewall dopant region extends vertically downward along the endpoint sidewall of the trench to reach the trench bottom dopant region and pick-up the trench bottom dopant region to the top surface of the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.