Inventor · Saratoga, CA, US

Hong Chang

80Patents
13h-index
39Co-inventors
80Inventor score

Filing activity: Sep 27, 2004 → Jul 18, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US8299494B2 Nanotube semiconductor devices Electricity 60 Active
US7910486B2 Method for forming nanotube semiconductor devices Electricity 37 Active
US8809948B1 Device structure and methods of making high density MOSFETs for load switch and DC-DC applications Electricity 24 Active
US8951867B2 High density trench-based power MOSFETs with self-aligned active contacts and method for making such devices Electricity 21 Active
US9190512B2 High density trench-based power MOSFETs with self-aligned active contacts and method for making such devices Electricity 20 Active
US8252647B2 Fabrication of trench DMOS device having thick bottom shielding oxide Electricity 18 Active
US9136380B2 Device structure and methods of making high density MOSFETs for load switch and DC-DC applications Electricity 18 Active
US8193580B2 Shielded gate trench MOSFET device and fabrication Electricity 16 Active
US7767526B1 High density trench MOSFET with single mask pre-defined gate and contact trenches Electricity 16 Active
US7879676B2 High density trench mosfet with single mask pre-defined gate and contact trenches Electricity 15 Active
US8236651B2 Shielded gate trench MOSFET device and fabrication Electricity 14 Active
US8431457B2 Method for fabricating a shielded gate trench MOS with improved source pickup layout Electricity 14 Active
US8187939B2 Direct contact in trench with three-mask shield gate process Electricity 13 Active
US9105494B2 Termination trench for power MOSFET applications Electricity 13 Active
US8138605B2 Multiple layer barrier metal for device component formed in contact trench Emerging Cross-Sectional Technologies 12 Active
US8750055B2 Nonvolatile memory device, read method for nonvolatile memory device, and memory system incorporating nonvolatile memory device Physics 11 Active
US7667264B2 Shallow source MOSFET Electricity 11 Expired
US7875541B2 Shallow source MOSFET Electricity 10 Active
US9281368B1 Split-gate trench power MOSFET with protected shield oxide Electricity 10 Active
US8785270B2 Integrating schottky diode into power MOSFET Electricity 9 Active
US9356022B2 Semiconductor device with termination structure for power MOSFET applications Electricity 9 Active
US9036431B2 Nonvolatile memory device, read method for nonvolatile memory device, and memory system incorporating nonvolatile memory device Physics 8 Active
US8502302B2 Integrating Schottky diode into power MOSFET Electricity 8 Active
US9450088B2 High density trench-based power MOSFETs with self-aligned active contacts and method for making such devices Electricity 8 Active
US8053315B2 Method to manufacture split gate with high density plasma oxide layer as inter-polysilicon insulation layer Electricity 8 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.