Inventor · Hsinchu, TW

Jongoh Kim

51Patents
11h-index
36Co-inventors
74Inventor score

Filing activity: Aug 28, 2002 → Jan 19, 2018

Most-cited inventions

PatentTitleAreaCited byStatus
US6765259B2 Non-volatile memory transistor array implementing “H” shaped source/drain regions and method for fabricating same Physics 36 Expired
US8995910B2 Antenna and mobile terminal having the same Electricity 30 Active
US8809948B1 Device structure and methods of making high density MOSFETs for load switch and DC-DC applications Electricity 24 Active
US8951867B2 High density trench-based power MOSFETs with self-aligned active contacts and method for making such devices Electricity 21 Active
US9190512B2 High density trench-based power MOSFETs with self-aligned active contacts and method for making such devices Electricity 20 Active
US9136380B2 Device structure and methods of making high density MOSFETs for load switch and DC-DC applications Electricity 18 Active
US8785278B2 Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact Electricity 15 Active
US8785279B2 High voltage field balance metal oxide field effect transistor (FBM) Electricity 14 Active
US8431457B2 Method for fabricating a shielded gate trench MOS with improved source pickup layout Electricity 14 Active
US9105494B2 Termination trench for power MOSFET applications Electricity 13 Active
US9484452B2 Integrating enhancement mode depleted accumulation/inversion channel devices with MOSFETs Electricity 11 Active
US9356022B2 Semiconductor device with termination structure for power MOSFET applications Electricity 9 Active
US9129822B2 High voltage field balance metal oxide field effect transistor (FBM) Electricity 9 Active
US8785270B2 Integrating schottky diode into power MOSFET Electricity 9 Active
US9318587B2 Injection control in semiconductor power devices Electricity 8 Active
US9450088B2 High density trench-based power MOSFETs with self-aligned active contacts and method for making such devices Electricity 8 Active
US8502302B2 Integrating Schottky diode into power MOSFET Electricity 8 Active
US9748375B2 Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact Electricity 7 Active
US8803251B2 Termination of high voltage (HV) devices with new configurations and methods Electricity 6 Active
US9281394B2 Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact Electricity 6 Active
US8610235B2 Trench MOSFET with integrated Schottky barrier diode Electricity 5 Active
US9484453B2 Device structure and methods of making high density MOSFETs for load switch and DC-DC applications Electricity 5 Active
US8994101B2 Shielded gate trench MOS with improved source pickup layout Electricity 5 Active
US7517737B2 Structures for and method of silicide formation on memory array and peripheral logic devices Electricity 4 Active
US9136377B2 High density MOSFET array with self-aligned contacts delimited by nitride-capped trench gate stacks and method Electricity 4 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.