Patent · US Active

Bottom and side plasma tuning having closed loop control

US10128118B2 · kind B2 · utility

2Cited by

5References

18Claims

0Family size

Assignee

Applied Materials, Inc. · US

Inventors

Juan Carlos Rocha-Alvarez · Redwood City, US
Amit Kumar BANSAL · Milpitas, US
Ganesh Balasubramanian · Sunnyvale, US
Jianhua Zhou · Campbell, US
Ramprakash Sankarakrishnan · Santa Clara, US
Mohamad A. Ayoub · Los Gatos, US
Jian J. Chen · Fremont, US

Key dates

Filing date	Sep 23, 2013
Grant date	Nov 13, 2018
Priority date	—
Expiry date	Aug 31, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH01J37/32532
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

An apparatus for plasma processing a substrate is provided. The apparatus comprises a processing chamber, a substrate support disposed in the processing chamber, and a lid assembly coupled to the processing chamber. The lid assembly comprises a conductive gas distributor coupled to a power source. A tuning electrode may be disposed between the conductive gas distributor and the chamber body for adjusting a ground pathway of the plasma. A second tuning electrode may be coupled to the substrate support, and a bias electrode may also be coupled to the substrate support.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.