Self-aligned metal wire on contact structure and method for forming same
US10199271B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 1, 2017 |
| Grant date | Feb 5, 2019 |
| Priority date | — |
| Expiry date | Sep 1, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1031
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A structure and method for forming a self-aligned metal wire on a contact structure. The method for forming the self-aligned metal wire and contact structure may include, among other things, forming an initial contact structure above a substrate; forming a patterned mask on the initial contact structure, the mask including an opening; using the patterned mask to form an opening through the initial contact structure; forming a dielectric layer in the openings; removing the patterned mask to expose a remaining portion of the initial contact structure; and forming the metal wire on the remaining portion of the initial contact structure. The contact structure may include a vertical cross-sectional geometry including one of a trapezoid wherein a bottommost surface of the first contact structure is wider than an uppermost surface of the first contact structure, and a parallelogram. The metal wire may completely contact an uppermost surface of the contact structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.