Fin patterns with varying spacing without fin cut
US10211055B2 · kind B2 · utility
7Cited by
18References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 5, 2018 |
| Grant date | Feb 19, 2019 |
| Priority date | — |
| Expiry date | Mar 5, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming semiconductor fins include forming first spacers on a first sidewall of each of multiple mandrels using an angled deposition process. A second sidewall of one or more of the mandrels is masked in a finless region. Second spacers are formed on a second sidewall of all unmasked mandrels. Semiconductor fins are formed from a substrate using the first and second spacers as a pattern mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.