Inventor · Rensselaer, NY, US

Sean Teehan

70Patents
8h-index
24Co-inventors
70Inventor score

Filing activity: Jun 18, 2014 → Apr 12, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US9608065B1 Air gap spacer for metal gates Electricity 89 Active
US9620590B1 Nanosheet channel-to-source and drain isolation Electricity 86 Active
US9362179B1 Method to form dual channel semiconductor material fins Electricity 24 Active
US9905643B1 Vertically aligned nanowire channels with source/drain interconnects for nanosheet transistors Electricity 22 Active
US9450095B1 Single spacer for complementary metal oxide semiconductor process flow Electricity 13 Active
US9318574B2 Method and structure for enabling high aspect ratio sacrificial gates Electricity 11 Active
US10074730B2 Forming stacked nanowire semiconductor device Electricity 8 Active
US10014391B2 Vertical transport field effect transistor with precise gate length definition Electricity 8 Active
US9728622B1 Dummy gate formation using spacer pull down hardmask Electricity 7 Active
US10211055B2 Fin patterns with varying spacing without fin cut Electricity 7 Active
US9842739B2 Method and structure for enabling high aspect ratio sacrificial gates Electricity 6 Active
US9659779B2 Method and structure for enabling high aspect ratio sacrificial gates Electricity 5 Active
US10043801B2 Air gap spacer for metal gates Electricity 4 Active
US10249738B2 Nanosheet channel-to-source and drain isolation Electricity 4 Active
US9536744B1 Enabling large feature alignment marks with sidewall image transfer patterning Electricity 4 Active
US10381437B2 Semiconductor device and method of forming the semiconductor device Electricity 4 Active
US9917196B1 Semiconductor device and method of forming the semiconductor device Electricity 4 Active
US9893166B2 Dummy gate formation using spacer pull down hardmask Electricity 3 Active
US10833190B2 Super long channel device within VFET architecture Electricity 3 Active
US9786666B2 Method to form dual channel semiconductor material fins Electricity 3 Active
US10615269B2 Nanosheet channel-to-source and drain isolation Electricity 3 Active
US9953915B2 Electrically conductive interconnect including via having increased contact surface area Electricity 2 Active
US9553044B2 Electrically conductive interconnect including via having increased contact surface area Electricity 2 Active
US9991117B2 Fin patterns with varying spacing without fin cut Electricity 2 Active
US11043581B2 Nanosheet channel-to-source and drain isolation Electricity 2 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.