PECVD apparatus for in-situ deposition of film stacks

US10214816B2 · kind B2 · utility

Assignee

• Novellus Systems, Inc. · US

Inventors

• Jason Dirk Haverkamp · Scotia, US
• Pramod Subramonium · Beaverton, US
• Joseph L. Womack · Tigard, US
• Dong Niu · 魏塘街道, CN
• Keith Fox · Tigard, US
• John B. Alexy · West Linn, US
• Patrick Breiling · Portland, US
• Jennifer Leigh Petraglia · Portland, US
• Mandyam Sriram · Beaverton, US
• George Andrew Antonelli · Portland, US
• Bart J. van Schravendijk · Sunnyvale, US

Key dates

• Filing date: Apr 25, 2014
• Grant date: Feb 26, 2019
• Expiry date: Apr 13, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/67207
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

An apparatus for depositing film stacks in-situ (i.e., without a vacuum break or air exposure) are described. In one example, a plasma-enhanced chemical vapor deposition apparatus configured to deposit a plurality of film layers on a substrate without exposing the substrate to a vacuum break between film deposition phases, is provided. The apparatus includes a process chamber, a plasma source and a controller configured to control the plasma source to generate reactant radicals using a particular reactant gas mixture during the particular deposition phase, and sustain the plasma during a transition from the particular reactant gas mixture supplied during the particular deposition phase to a different reactant gas mixture supplied during a different deposition phase.