Cascode semiconductor device structure and method therefor
US10217737B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 12, 2017 |
| Grant date | Feb 26, 2019 |
| Priority date | — |
| Expiry date | Jul 12, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one embodiment, a cascode rectifier structure includes a group III-V semiconductor structure includes a heterostructure disposed on a semiconductor substrate. A first current carrying electrode and a second current carrying electrode are disposed adjacent a major surface of the heterostructure and a control electrode is disposed between the first and second current carrying electrode. A rectifier device is integrated with the group III-V semiconductor structure and is electrically connected to the first current carrying electrode and to a third electrode. The control electrode is further electrically connected to the semiconductor substrate and the second current path is generally perpendicular to a primary current path between the first and second current carrying electrodes. The cascode rectifier structure is configured as a two terminal device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.