Chemical mechanical polishing (CMP) composition for high effective polishing of substrates comprising germanium

US10227506B2 · kind B2 · utility

Assignee

• BASF SE

Inventors

• Max Siebert · Ludwigshafen, DE
• Michael Lauter · Mannheim, DE
• Yongqing Lan · Potsdam, US
• Robert REICHARDT · Ludwigshafen am Rhein, DE
• Alexandra Muench · Haßloch, DE
• Manuel SIX · Östringen, DE
• Gerald Daniel · Oberkochen, DE
• Bastian Marten Noller · Lorsch, DE
• Kevin Huang · Export, US
• Sheik Ansar Usman Ibrahim · Waterloo, BE

Key dates

• Filing date: Dec 4, 2015
• Grant date: Mar 12, 2019
• Expiry date: Dec 4, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/461
• WIPO field: Basic materials chemistry
• WIPO sector: Chemistry

Abstract

Disclosed herein is a chemical mechanical polishing (CMP) composition (Q) containing (A) inorganic particles, (B) a compound of general formula (I) below, and (C) an aqueous medium, in which the composition (Q) has a pH of from 2 to 6.