Patent · US Active

LDMOS transistor and method

US10242932B2 · kind B2 · utility

0Cited by

17References

13Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Albert Birner · Regensburg, DE
Helmut Brech · Lappersdorf, DE
Matthias Zigldrum · Regensburg, DE

Key dates

Filing date	Jun 24, 2016
Grant date	Mar 26, 2019
Priority date	—
Expiry date	Jun 24, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/112
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In an embodiment, a semiconductor device includes a semiconductor substrate having a front surface, a LDMOS transistor arranged in the front surface of the substrate and having an intrinsic source, and a through substrate via. A first conductive layer lines sidewalls of the through substrate via and extends from the through substrate via onto the front surface of the semiconductor substrate and is electrically coupled with the intrinsic source.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.