Hybrid dielectric scheme for varying liner thickness and manganese concentration
US10256191B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 23, 2017 |
| Grant date | Apr 9, 2019 |
| Priority date | — |
| Expiry date | Jan 23, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1036
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is provided and includes first and second dielectrics, first and second conductive elements, a self-formed-barrier (SFB) and a liner. The first and second dielectrics are disposed with one of first-over-second dielectric layering and second-over-first dielectric layering. The first and second conductive elements are respectively suspended at least partially within a lower one of the first and second dielectrics and at least partially within the other one of the first and second dielectrics. The self-formed-barrier (SFB) is formed about a portion of one of the first and second conductive elements which is suspended in the second dielectric. The liner is deposited about a portion of the other one of the first and second conductive elements which is partially suspended in the first dielectric.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.