Steep-switch field effect transistor with integrated bi-stable resistive system
US10256316B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 12, 2018 |
| Grant date | Apr 9, 2019 |
| Priority date | — |
| Expiry date | Feb 12, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/34
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Fabricating a steep-switch transistor includes receiving a semiconductor structure including a substrate, a fin disposed on the substrate, a source/drain disposed on the substrate adjacent to the fin, a gate disposed upon the fin, a cap disposed on the gate, a trench contact formed on and in contact with the source/drain, and a source/drain contact formed on an in contact with the trench contact. A recess is formed in a portion of the source/drain contact using a recess patterning process. A bi-stable resistive system (BRS) material is deposited in the recess in contact with the portion of the source/drain contact. A metallization layer is formed in contact upon the BRS material, a portion of the source/drain contact, the BRS material, and a portion of the metallization layer contact forming a reversible switch.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.