Matchless plasma source for semiconductor wafer fabrication
US10264663B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 18, 2017 |
| Grant date | Apr 16, 2019 |
| Priority date | — |
| Expiry date | Oct 18, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H2242/24
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
A matchless plasma source is described. The matchless plasma source includes a controller that is coupled to a direct current (DC) voltage source of an agile DC rail to control a shape of an amplified square waveform that is generated at an output of a half-bridge transistor circuit. The matchless plasma source further includes the half-bridge transistor circuit used to generate the amplified square waveform to power an electrode, such as an antenna, of a plasma chamber. The matchless plasma source also includes a reactive circuit between the half-bridge transistor circuit and the electrode. The reactive circuit has a high-quality factor to negate a reactance of the electrode. There is no radio frequency (RF) match and an RF cable that couples the matchless plasma source to the electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.