Low resistance contacts to source or drain region of transistor
US10283608B2 · kind B2 · utility
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12References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 17, 2017 |
| Grant date | May 7, 2019 |
| Priority date | — |
| Expiry date | Apr 14, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76855
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A conductive source/drain contact is formed within a trench overlying a raised epitaxial source/drain junction. The conductive contact includes a conductive liner and a conductive fill material formed directly over the conductive liner. The conductive fill material is selected from a platinum group metal such as ruthenium. The conductive liner may be directionally deposited into the trench and is adapted to form a metal silicide in situ through a reaction with the epitaxial layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.