Methods and apparatus for three-dimensional nonvolatile memory
US10283708B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 7, 2017 |
| Grant date | May 7, 2019 |
| Priority date | — |
| Expiry date | Apr 3, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B69/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method is provided that includes forming a word line above a substrate, the word line disposed in a first direction, forming a bit line above the substrate, the bit line disposed in a second direction perpendicular to the first direction, forming a nonvolatile memory material between the word line and the bit line, and forming a memory cell including the nonvolatile memory material at an intersection of the bit line and the word line. The word line includes a first portion and a second portion including an electrically conductive carbon-containing material. The nonvolatile memory material includes a semiconductor material layer and a conductive oxide material layer, with the semiconductor material layer disposed adjacent the second portion of the word line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.