Plasma uniformity control by gas diffuser hole design
US10312058B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 28, 2017 |
| Grant date | Jun 4, 2019 |
| Priority date | — |
| Expiry date | Sep 28, 2037 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49996
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Embodiments of a method of depositing a thin film on a substrate is provided that includes placing a substrate on a substrate support that is mounted in a processing region of a processing chamber, flowing a process fluid through a plurality of gas passages in a diffuser plate toward the substrate supported on the substrate support, wherein the diffuser plate has an upstream side and a downstream side and the downstream side has a substantially concave curvature, and each of the gas passages are formed between the upstream side and the downstream side, and creating a plasma between the downstream side of the diffuser plate and the substrate support.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.