Heterojunction bipolar transistors with multiple emitter fingers and undercut extrinsic base regions
US10312356B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 20, 2018 |
| Grant date | Jun 4, 2019 |
| Priority date | — |
| Expiry date | Jun 20, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/641
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Device structures and fabrication methods for heterojunction bipolar transistors. Trench isolation regions are arranged to surround a plurality of active regions, and a collector is located in each of the active regions. A base layer includes a plurality of first sections that are respectively arranged over the active regions and a plurality of second sections that are respectively arranged over the trench isolation regions. The first sections of the base layer contain single-crystal semiconductor material, and the second sections of the base layer contain polycrystalline semiconductor material. The second sections of the base layer are spaced in a vertical direction from the trench isolation regions to define a plurality of cavities. A plurality of emitter fingers are respectively arranged on the first sections of the base layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.