Patent · US Active

Guard rings for cascode gallium nitride devices

US10312359B2 · kind B2 · utility

1Cited by
1References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 17, 2018
Grant dateJun 4, 2019
Priority date
Expiry dateApr 17, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D62/343
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Implementations of semiconductor devices may include: a plurality of drain fingers and a plurality of source fingers interdigitated with one another; at least one gate; and at gate bus formed to completely surround the plurality of drain fingers and the plurality of source fingers; wherein the gate bus is mechanically and electrically coupled to the at least one gate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.