Dummy assist features for pattern support

US10332745B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Lei Sun · Beijing, CN
• Ruilong Xie · Niskayuna, US
• Wenhui Wang · Clifton Park, US
• Yulu Chen · Troy, US
• Erik Verduijn · Rensselaer, US
• Zhengqing John Qi · Albany, US
• Guoxiang Ning · Clifton Park, US
• Daniel James Dechene · Watervliet, US

Key dates

• Filing date: May 17, 2017
• Grant date: Jun 25, 2019
• Expiry date: May 17, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76879
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods of forming printed patterns and structures formed using printed patterns. A first line and a second line are lithographically printed in a first layer composed of photoimageable material with a space arranged between the first line and the second line. A dummy assist feature is also lithographically printed in the photoimageable material of the first layer. A second layer underlying the first layer is etched with the first line, the second line, and the dummy assist feature present as an etch mask. The dummy assist feature is arranged on a portion of the space adjacent to the first line and supports the photoimageable material of the first line during etching.