Semiconductor device including an LDMOS transistor and a resurf structure

US10340334B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Albert Birner · Regensburg, DE
• Helmut Brech · Lappersdorf, DE
• Matthias Zigldrum · Regensburg, DE
• Michaela Braun · Regensburg, DE
• Christian Eckl · Regensburg, DE

Key dates

• Filing date: May 23, 2018
• Grant date: Jul 2, 2019
• Expiry date: May 23, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/112
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In an embodiment, a semiconductor device includes a semiconductor substrate having a bulk resistivity ρ≥100 Ohm.cm, a front surface and a rear surface. An LDMOS transistor is arranged in the semiconductor substrate. A RESURF structure including a doped buried layer is arranged in the semiconductor substrate. The LDMOS transistor includes a body contact region doped with a first conductivity type, and a source region disposed in the body contact region and doped with a second conductivity type opposite the first conductivity type. The source region includes a first well and a second well of the same second conductivity type. The first well is more highly doped than the second well. The first well extends from inside the body contact region to outside of a lateral extent of the body contact region in a direction towards a source side of a gate of the LDMOS transistor.