Imaging of crystalline defects
US10347462B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 17, 2018 |
| Grant date | Jul 9, 2019 |
| Priority date | — |
| Expiry date | Apr 17, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2813
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for detecting crystal defects includes scanning a first FOV on a first sample using a charged particle beam with a plurality of different tilt angles. BSE emitted from the first sample are detected and a first image of the first FOV is created. A first area within the first image is identified where signals from the BSE are lower than other areas of the first image. A second FOV on a second sample is scanned using approximately the same tilt angles or deflections as those used to scan the first area. The BSE emitted from the second sample are detected and a second image of the second FOV is created. Crystal defects within the second sample are identified by identifying areas within the second image where signals from the BSE are different than other areas of the second image.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.