Method of processing a porous conductive structure in connection to an electronic component on a substrate

US10373868B2 · kind B2 · utility

Assignees

• Infineon Technologies Austria AG · AT
• Technische Universität Wien · AT

Inventors

• Martin Mischitz · Wernberg, AT
• Markus Heinrici · Klagenfurt, AT
• Michael Roesner · Villach, AT
• Oliver Hellmund · Straubing, DE
• Caterina Travan · Munich, DE
• Manfred Schneegans · Vaterstetten, DE
• Peter Irsigler · Ried im Innkreis, AT
• Friedrich Kroener · Villach, AT

Key dates

• Filing date: Jan 18, 2016
• Grant date: Aug 6, 2019
• Expiry date: Jan 18, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D12/441
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

According to various embodiments, a method for processing a substrate may include: processing a plurality of device regions in a substrate separated from each other by dicing regions, each device region including at least one electronic component; wherein processing each device region of the plurality of device regions includes: forming a recess into the substrate in the device region, wherein the recess is defined by recess sidewalls of the substrate, wherein the recess sidewalls are arranged in the device region; forming a contact pad in the recess to electrically connect the at least one electronic component, wherein the contact pad has a greater porosity than the recess sidewalls; and singulating the plurality of device regions from each other by dicing the substrate in the dicing region.