Dry plasma etch method to pattern MRAM stack
US10374144B2 · kind B2 · utility
18Cited by
33References
16Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 28, 2017 |
| Grant date | Aug 6, 2019 |
| Priority date | — |
| Expiry date | Sep 28, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods of etching metal by depositing a material reactive with a metal to be etched and a halogen to form a volatile species and exposing the substrate to a halogen-containing gas and activation gas to etch the substrate are provided. Deposited materials may include silicon, germanium, titanium, carbon, tin, and combinations thereof. Methods are suitable for fabricating MRAM structures and may involve integrating ALD and ALE processes without breaking vacuum.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.