Replacement metal gate patterning for nanosheet devices
US10410933B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 23, 2017 |
| Grant date | Sep 10, 2019 |
| Priority date | — |
| Expiry date | Jun 23, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0172
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This disclosure relates to a method of replacement metal gate patterning for nanosheet devices including: forming a first and a second nanosheet stack on a substrate, the first and the second nanosheet stacks being adjacent to each other and each including vertically adjacent nanosheets separated by a distance; depositing a first metal surrounding the first nanosheet stack and a second portion of the first metal surrounding the second nanosheet stack; forming an isolation region between the first nanosheet stack and the second nanosheet stack; removing the second portion of the first metal surrounding the second nanosheet stack with an etching process, the isolation region preventing the etching process from reaching the first portion of the first metal and thereby preventing removal of the first portion of the first metal; and depositing a second metal surrounding each of the nanosheets of the second nanosheet stack.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.