LDMOS transistor and method

US10410956B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Albert Birner · Regensburg, DE
• Helmut Brech · Lappersdorf, DE
• Matthias Zigldrum · Regensburg, DE

Key dates

• Filing date: Jun 24, 2016
• Grant date: Sep 10, 2019
• Expiry date: Jun 24, 2036

Classification

• Technology area (CPC —): General

Abstract

In an embodiment, a semiconductor device includes a semiconductor substrate, a LDMOS transistor arranged in a front surface of the semiconductor substrate and a conductive through substrate via. The conductive through substrate via includes a via extending from the front surface to a rear surface of the semiconductor substrate, a conductive plug filling a first portion of the via and a conductive liner layer lining side walls of a second portion of the via and electrically coupled to the conductive plug.