Process of forming an electronic device including a multiple channel HEMT
US10418472B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 28, 2017 |
| Grant date | Sep 17, 2019 |
| Priority date | — |
| Expiry date | Apr 28, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/112
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electronic device can include a HEMT including at least two channel layers. In an embodiment, a lower semiconductor layer overlies a lower channel layer, wherein the lower semiconductor layer has an aluminum content that is at least 10% of a total metal content of the lower semiconductor layer. An upper semiconductor layer overlies the upper channel layer, wherein the upper semiconductor layer has an aluminum content that is greater as compared to the lower semiconductor layer. In another embodiment, an electronic device can include stepped source and drain electrodes, so that lower contact resistance can be achieved. In a further embodiment, an absolute value of a difference between pinch-off or threshold voltages between different channel layers is greater than 1 V and allows current to be turned on or turned off for a channel layer without affecting another channel layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.