Compositions and methods for selectively etching titanium nitride
US10428271B2 · kind B2 · utility
3Cited by
76References
16Claims
0Family size
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Key dates
| Filing date | Aug 28, 2014 |
| Grant date | Oct 1, 2019 |
| Priority date | — |
| Expiry date | Aug 28, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32134
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to insulating materials from a microelectronic device having same thereon. The removal compositions contain at least one oxidant, one etchant, and one activator to enhance the etch rate of titanium nitride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.