Patent · US Active

Semiconductor device having a copper element and method of forming a semiconductor device having a copper element

US10446469B2 · kind B2 · utility

0Cited by

6References

15Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Thomas Detzel · Villach, AT
Johann Gross · Heilbronn, DE
Robert Illing · Finkenstein, AT
Maximilian Krug · Zeitlarn, DE
Sven Lanzerstorfer · Feldkirchen in Kärnten, AT
Michael Nelhiebel · Villach, AT
Werner Robl · Regensburg, DE
Michael Rogalli · Rottenburg am Neckar, DE
Stefan Woehlert · Villach, AT

Key dates

Filing date	Jul 22, 2016
Grant date	Oct 15, 2019
Priority date	—
Expiry date	May 29, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a base element and a copper element over the base element. The copper element includes a layer stack having at least two copper layers and at least one intermediate conductive layer of a material different from copper. The at least two copper layers and the at least one intermediate conductive layer are alternately stacked over each other.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.