Apparatus for depositing metal films with plasma treatment
US10453657B2 · kind B2 · utility
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2References
16Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 5, 2017 |
| Grant date | Oct 22, 2019 |
| Priority date | — |
| Expiry date | Nov 2, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3321
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Embodiments of a gas delivery apparatus for use in a radio frequency (RF) processing apparatus are provided herein. In some embodiments, a gas delivery apparatus for use in a radio frequency (RF) processing apparatus includes: a conductive gas line having a first end and a second end; a first flange coupled to the first end; a second flange coupled to the second end, wherein the conductive gas line extends through and between the first and second flanges; and a block of ferrite material surrounding the conductive gas line between the first and second flanges.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.