Ion-ion plasma atomic layer etch process and reactor
US10475626B2 · kind B2 · utility
3Cited by
12References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 17, 2015 |
| Grant date | Nov 12, 2019 |
| Priority date | — |
| Expiry date | Mar 17, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/85017
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A reactor with an overhead electron beam source is capable of generating an ion-ion plasma for performing an atomic layer etch process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.