Semiconductor device having a metal adhesion and barrier structure and a method of forming such a semiconductor device

US10475743B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Frank Hille · Munich, DE
• Ravi Keshav Joshi · Klagenfurt, AT
• Michael Fugger · Wien, AT
• Oliver Humbel · Maria Elend, AT
• Thomas Laska · Birkenfeld, DE
• Matthias Mueller · Harsefeld, DE
• Roman Roth · Sattendorf, AT
• Carsten Schaeffer · Annenheim, AT
• Hans-Joachim Schulze · Taufkirchen, DE
• Holger Schulze · Villach, AT
• Juergen Steinbrenner · Zistersdorf, AT
• Frank Umbach · Munich, DE

Key dates

• Filing date: Mar 14, 2017
• Grant date: Nov 12, 2019
• Expiry date: May 30, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L23/53238
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

According to an embodiment of a semiconductor device, the semiconductor devices includes a metal structure electrically connected to a semiconductor body and a metal adhesion and barrier structure between the metal structure and the semiconductor body. The metal adhesion and barrier structure includes a first layer having titanium and tungsten, and a second layer having titanium, tungsten, and nitrogen on the first layer having titanium and tungsten.