Front-end-of-line device structure and method of forming such a front-end-of-line device structure

US10483154B1 · kind B1 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Elliot John Smith · Dresden, DE
• Marcus Wolf · Bensheim, DE
• Carsten Peters · Dresden, DE
• Markus Lenski · Dresden, DE
• Loic Gaben · Albi, FR

Key dates

• Filing date: Jun 22, 2018
• Grant date: Nov 19, 2019
• Expiry date: Jun 22, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/115
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In various aspects, the present disclosure relates to device structures and a method of forming such a device structure. In some illustrative embodiments herein, a device is provided, including a semiconductor substrate having a first trench formed therein, and a first trench isolation structure formed in the first trench. The first trench isolation structure includes first and second insulating liners formed adjacent inner surfaces of the first trench, wherein the first insulating liner is in direct contact with inner surfaces of the first trench and the second insulating liner is formed directly on the first insulating liner, and a first insulating filling material which at least partially fills the first trench. In some aspects, a thickness of the first insulating liner is greater than a thickness of the second insulating liner.