Nanowire structures having wrap-around contacts
US10483385B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 23, 2011 |
| Grant date | Nov 19, 2019 |
| Priority date | — |
| Expiry date | Dec 23, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/83
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Nanowire structures having wrap-around contacts are described. For example, a nanowire semiconductor device includes a nanowire disposed above a substrate. A channel region is disposed in the nanowire. The channel region has a length and a perimeter orthogonal to the length. A gate electrode stack surrounds the entire perimeter of the channel region. A pair of source and drain regions is disposed in the nanowire, on either side of the channel region. Each of the source and drain regions has a perimeter orthogonal to the length of the channel region. A first contact completely surrounds the perimeter of the source region. A second contact completely surrounds the perimeter of the drain region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.