Methods of forming contact structures on integrated circuit products
US10497612B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 11, 2017 |
| Grant date | Dec 3, 2019 |
| Priority date | — |
| Expiry date | Dec 11, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76883
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One illustrative method disclosed includes, among other things, forming at least one layer of sacrificial material above an underlying conductive structure, forming a sacrificial contact structure in the at least one layer of sacrificial material and forming at least one layer of insulating material around the sacrificial contact structure. In this example, the method also includes performing at least one process operation to expose an upper surface of the sacrificial contact structure, removing the sacrificial contact structure so as to form a contact opening that exposes the upper surface of the underlying conductive structure and forming a final contact structure in the contact opening, the final contact structure conductively contacting the underlying conductive structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.