Using source/drain contact cap during gate cut

US10522538B1 · kind B1 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Haiting Wang · Clifton Park, US
• Shesh Mani Pandey · Saratoga Springs, US
• Jiehui Shu · Clifton Park, US
• Laertis Economikos · Hopewell Junction, US
• Hui Zang · Guilderland, US
• Ruilong Xie · Niskayuna, US
• Guowei Xu · Lawrence, US
• Zhaoying Hu · Clifton Park, US

Key dates

• Filing date: Jul 11, 2018
• Grant date: Dec 31, 2019
• Expiry date: Jul 11, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038

Abstract

Parallel fins are formed (in a first orientation), and source/drain structures are formed in or on the fins, where channel regions of the fins are between the source/drain structures. Parallel gate structures are formed to intersect the fins (in a second orientation perpendicular to the first orientation), source/drain contacts are formed on source/drain structures that are on opposite sides of the gate structures, and caps are formed on the source/drain contacts. After forming the caps, a gate cut structure is formed interrupting the portion of the gate structure that extends between adjacent fins. The upper portion of the gate cut structure includes extensions, where a first extension extends into one of the caps on a first side of the gate cut structure, and a second extension extends into the inter-gate insulator on a second side of the gate cut structure.