Work function metal patterning for N-P spaces between active nanostructures using unitary isolation pillar
US10566248B1 · kind B1 · utility
14Cited by
7References
6Claims
0Family size
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Key dates
| Filing date | Jul 27, 2018 |
| Grant date | Feb 18, 2020 |
| Priority date | — |
| Expiry date | Jul 27, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/121
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method includes forming an isolation pillar between first and second active nanostructures for adjacent FETs. When a first WFM surrounding the second active nanostructure is removed as part of a WFM patterning process, creating a discontinuity in the first metal. The pillar or the discontinuity in the first metal on the part of the pillar prevent the etching from reaching and removing the first WFM on the first active nanostructure. The isolation pillar creates a gate cut isolation in a selected gate region, and can be shortened in another gate region to allow for gate sharing between adjacent FETs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.