Forming silicon oxide layers by radical oxidation and semiconductor device with silicon oxide layer

US10566426B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Anton Mauder · Kolbermoor, DE
• Oliver Hellmund · Straubing, DE
• Peter Irsigler · Ried im Innkreis, AT
• Jens Peter Konrath · Villach, AT
• David Laforet · Villach, AT
• Maik Langner · Dresden, DE
• Markus Neuber · Freital, DE
• Hans-Joachim Schulze · Taufkirchen, DE
• Ralf Siemieniec · Villach, AT
• Knut Stahrenberg · Wappingers Falls, US
• Olaf Storbeck · Dresden, DE

Key dates

• Filing date: Dec 20, 2017
• Grant date: Feb 18, 2020
• Expiry date: Dec 20, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/127
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A body structure and a drift zone are formed in a semiconductor layer, wherein the body structure and the drift zone form a first pn junction. A silicon nitride layer is formed on the semiconductor layer. A silicon oxide layer is formed from at least a vertical section of the silicon nitride layer by oxygen radical oxidation.