Hybrid fin cut with improved fin profiles

US10586736B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Haiting Wang · Clifton Park, US
• Ruilong Xie · Niskayuna, US
• Shesh Mani Pandey · Saratoga Springs, US
• Hui Zang · Guilderland, US
• Garo Derderian · Boise, US
• Scott Beasor · Greenwich, US

Key dates

• Filing date: Jun 11, 2018
• Grant date: Mar 10, 2020
• Expiry date: Jun 11, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/10
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present disclosure relates to semiconductor structures and, more particularly, to a hybrid fin cut with improved fin profiles and methods of manufacture. The structure includes: a plurality of fin structures in a first region of a first density of fin structures; a plurality of fin structures in a second region of a second density of fin structures; and a plurality of fin structures in a third region of a third density of fin structures. The first density, second density and third density of fin structures are different densities of fin structures, and the plurality of fin structures in the first region, the second region and the third region have a substantially uniform profile.