Light emitting device with improved extraction efficiency

US10586891B2 · kind B2 · utility

Assignee

• LUMILEDS LLC · US

Inventors

• Nathan Gardner · Mountain View, US
• Werner Goetz · Palo Alto, US
• Michael Jason Grundmann · San Jose, US
• Melvin McLaurin · Midland School, US
• John E. Epler · San Jose, US
• Michael D. Camras · San Jose, US
• Aurelien Jean Francois David · San Jose, US

Key dates

• Filing date: Feb 25, 2019
• Grant date: Mar 10, 2020
• Expiry date: Feb 25, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/8312

Abstract

Methods and apparatus are described. An apparatus includes a hexagonal oxide substrate and a III-nitride semiconductor structure adjacent the hexagonal oxide substrate. The III-nitride semiconductor structure includes a light emitting layer between an n-type region and a p-type region. The hexagonal oxide substrate has an in-plane coefficient of thermal expansion (CTE) within 30% of a CTE of the III-nitride semiconductor structure.