Method for fabricating a device with a tensile-strained NMOS transistor and a uniaxial compression strained PMOS transistor
US10600786B2 · kind B2 · utility
2Cited by
3References
8Claims
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Key dates
| Filing date | Mar 7, 2017 |
| Grant date | Mar 24, 2020 |
| Priority date | — |
| Expiry date | Mar 8, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/85
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Manufacture of a transistor device with at least one P type transistor with channel structure strained in uniaxial compression strain starting from a silicon layer strained in biaxial tension, by amorphization recrystallization then germanium condensation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.