Semiconductor device assembly including a thermal interface bond between a semiconductor die and a passive heat exchanger
US10607857B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 6, 2017 |
| Grant date | Mar 31, 2020 |
| Priority date | — |
| Expiry date | Dec 6, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/858
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of joining a semiconductor die to a passive heat exchanger can include applying a bond enhancing agent to a semiconductor device; creating an assembly that includes a thermal interface disposed on the semiconductor device such that a first major surface of the thermal interface material is in touching relation with the bond enhancing agent on the semiconductor device, and a heat exchanger disposed in touching relation with a second major surface of the thermal interface material; and reflowing the assembly such that the thermal interface bonds the heat exchanger to the semiconductor device. Embodiments can use the ability of indium to bond to a non-metallic surface to form the thermal interface, which may be enhanced by a secondary coating on either or both joining surfaces.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.