Patent · US Active

Optoelectronic device with three-dimensional semiconductor elements

US10615299B2 · kind B2 · utility

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1References
12Claims
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Key dates

Filing dateSep 29, 2015
Grant dateApr 7, 2020
Priority date
Expiry dateSep 29, 2035

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/821

Abstract

An optoelectronic device including three-dimensional semiconductor elements predominantly made of a first compound selected from among the group consisting of Compounds III-V, Compounds II-VI, and Compounds IV. Each semiconductor element defines, optionally with insulating portions partially covering said semiconductor element, at least one first surface including contiguous facets angled relative to each other. The optoelectronic device includes quantum dots at least some of the seams between the facets. The quantum dots are predominantly made of a mixture of the first compound and an additional element and are suitable for emitting or receiving a first electromagnetic radiation at a first wavelength.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.