Patent · US Active

LDMOS transistor and method

US10622284B2 · kind B2 · utility

2Cited by

17References

21Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Albert Birner · Regensburg, DE
Helmut Brech · Lappersdorf, DE
Matthias Zigldrum · Regensburg, DE

Key dates

Filing date	Jun 24, 2016
Grant date	Apr 14, 2020
Priority date	—
Expiry date	Aug 7, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/112
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In an embodiment, a semiconductor device includes a semiconductor substrate, a LDMOS transistor arranged in a front surface of the semiconductor substrate and a conductive through substrate via. The conductive through substrate via includes a via extending from the front surface to a rear surface of the semiconductor substrate, a conductive plug filling a first portion of the via and a conductive liner layer lining side walls of a second portion of the via and electrically coupled to the conductive plug.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.