High pressure annealing of metal gate structures
US10636705B1 · kind B1 · utility
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53References
20Claims
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Key dates
| Filing date | Nov 29, 2018 |
| Grant date | Apr 28, 2020 |
| Priority date | — |
| Expiry date | Nov 29, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/7685
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The method of treating a film stack includes depositing a barrier film containing a metal into a via formed within a dielectric layer disposed on a substrate and depositing a metal contact on the barrier film within the via, where a void is located within the barrier film or between the barrier film and the metal contact. The method also includes exposing the metal contact and the barrier film to an oxidizing agent at a temperature of less than 400° C. and at a pressure of about 20 bar to about 100 bar within a process chamber to produce a metal oxide within the void.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.